Study the impact of graphene channel over conventional silicon on DC/analog and RF performance of DG dual-material-gate VTFET

Author:

Zohmingliana ORCID,Choudhuri Bijit,Bhowmick Brinda

Publisher

Elsevier BV

Subject

General Engineering

Reference48 articles.

1. Simulation insights of a new dual gate graphene nano-ribbon tunnel field-effect transistors for THz applications;Nayana;Diam. Relat. Mater.,2022

2. TCAD based modeling and simulation of graphene nanostructured FET (GFET) for high frequency performance;Thingujam;ADBU J. Eng. Technol.,2017

3. Sub-10 nm graphene nano-ribbon tunnel field-effect transistor;Hammam;Carbon,2018

4. Design and simulation of nanoscale double-gate TFET/tunnel CNTFET;Bala;J. Semicond.,2018

5. Analysis of temperature dependent effects on DC, analog/RF and linearity parameters for a delta doped heterojunction vertical tunnel FET;Vanlalawmpuia;Silicon,2021

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