Experimental study and analysis of corner compensation structures for CMOS compatible bulk micromachining using 25wt% TMAH

Author:

Mukhiya R.,Bagolini A.,Bhattacharyya T.K.,Lorenzelli L.,Zen M.

Publisher

Elsevier BV

Subject

General Engineering

Reference20 articles.

1. The Mechanism of Anisotropic Silicon Etching and its Relevance for Micromachining;Seidel,1987

2. A. Koide, K. Sato and S. Tanaka, Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching, In: Proceedings of the IEEE Microelectromechanical Systems (MEMS) Workshop, Nara, Japan, 1991, pp. 216–220.

3. Methods for fabrication of convex corners in anisotropic etching of (100) silicon in aqueous KOH;Offereins;Sens. Actuators A,1990

4. Fabrication of non-underetched convex corner in anisotropic etching of (100) silicon in aqueous KOH with respect to novel micromechanical elements;Mayer;J. Electrochem. Soc.,,1990

5. New structure for corner compensation in anisotropic KOH etching;Enoksson;J. Micromech. Microeng.,1997

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