Analytical optimization of high-performance and high-yield spiral inductor in integrated passive device technology

Author:

Wang Cong,Kim Nam-Young

Publisher

Elsevier BV

Subject

General Engineering

Reference20 articles.

1. High performance RF integrated passive devices on thick oxide substrate using Cu-BCB process;Jeong;Microwave Opt. Technol. Lett.,2003

2. Fabrication of metal–insulator–metal capacitors with SiNx thin films deposited by plasma-enhanced chemical vapor deposition;Wang;Trans. Electr. Electron. Mater.,2009

3. High-performance integrated passive technology by advanced SI-GaAs-based fabrication for RF and microwave applications;Wang;Microwave Opt. Technol. Lett.,2010

4. A novel method for the fabrication of integrated passive device on SI-GaAs substrate;Wang;Int. J. Adv. Manuf. Technol.,2011

5. Passive miniaturization: Si integrated passive devices for RF and microwave applications;Kim;Microwave J.,2002

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