Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference19 articles.
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3. InGaP/GaP HBTs with high speed and low current operation fabricated using WSi/Ti as the base electrode and burying SiO2 in the extrinsic collector;Oka;IEDM Tech. Dig.,1997
4. Self-aligned SiGe NPN transistors with 285GHz fmax and 207GHz ft in a manufacturable technology;Jagannathan;IEEE Electron. Device Lett.,2002
5. SiGe HBTs with cutoff frequency of 350Ghz;Rieh,2002
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