A 24W Ku band GaN based power amplifier with 9.1dB linear gain-Reference-Cited by-同舟云学术

A 24W Ku band GaN based power amplifier with 9.1dB linear gain

Published:2012-08 Issue:8 Volume:43 Page:569-572
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Luo W.J.,Chen X.J.,Pang L.,Yuan T.T.,Liu X.Y.

Publisher

Elsevier BV

Subject

General Engineering

Reference14 articles.

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4. P. Waltereit, W. Bronner, R. Kiefer, R. Quay, J. Kühn, F. van Raay, M. Dammann, S. Müller, C. Libal, T. Meier, M. Mikulla, and O. Ambacher, High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology, in: Proceedings of the CS Mantech Conference, May 17th–20th, 2010, Portland, Oregon, USA

5. Enhancement-mode AlN/GaN/AlGaN DHFET with 700-mS/mm gm and 112-GHz fT;Corrion;IEEE Electron Dev. Lett.,2010

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