Author:
Sghaier N.,Trabelsi M.,Yacoubi N.,Bluet J.M.,Souifi A.,Guillot G.,Gaquière C.,DeJaeger J.C.
Reference30 articles.
1. Results, potential, and challenges of high power GaN-based transistors;Eastman;Phys. Stat. Sol. A,1999
2. Electric breakdown in GaN p–n junctions;Dimitriev;Appl. Phys. Lett.,1996
3. Monte Carlo simulation of electron transport in gallium nitride;Gelmont;J. Appl. Phys.,1993
4. Y. Ando, Y. Okamoto, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, M. Kuzuhara, 12W/mm recessed gate AlGaN/GaN heterojunction field-plate FET, presented at IEDM, Washington, DC, 7–10 December, 2003.
5. Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias;Khan;Electron. Lett.,1994
Cited by
24 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献