Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates

Author:

Sghaier N.,Trabelsi M.,Yacoubi N.,Bluet J.M.,Souifi A.,Guillot G.,Gaquière C.,DeJaeger J.C.

Publisher

Elsevier BV

Subject

General Engineering

Reference30 articles.

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4. Y. Ando, Y. Okamoto, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, M. Kuzuhara, 12W/mm recessed gate AlGaN/GaN heterojunction field-plate FET, presented at IEDM, Washington, DC, 7–10 December, 2003.

5. Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias;Khan;Electron. Lett.,1994

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