Design of a Hamming neural network based on single-electron tunneling devices-Reference-Cited by-同舟云学术

Design of a Hamming neural network based on single-electron tunneling devices

Published:2006-06 Issue:6 Volume:37 Page:510-518
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Guimarães J.G.,Nóbrega L.M.,da Costa J.C.

Publisher

Elsevier BV

Subject

General Engineering

Reference28 articles.

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3. Considerations about nanoelectronic GSI processors;da Costa;Analog Integrated Circuits and Signal Processing,2000

4. J. Carruthers, D. Hammerstrom, B. Colwell, G. Bourianoff, V. Zhirnov. Computer architectures for nanoscale devices, Technical report, Semiconductor Industry Association, 2003.

5. Coulomb blockade of tunneling and coherent oscillations in small tunnel junctions;Averin;Journal of Low Temperature Physics,1986

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