Author:
Dubey Shashank,Kondekar Pravin N.
Reference22 articles.
1. Integration of highly-strained SiGe materials in 14nm and beyond nodes FinFET technology;Wang;Solid-State Electron.,2015
2. Ground plane fin-shaped field effect transistor (GP-FinFET): a finFET for low leakage power circuits;Saremi;Microelectron. Eng.,2012
3. Uniaxial-process-induced strained-Si: extending the CMOS roadmap;Thompson;IEEE Trans. Electron. Devices,2006
4. M. Choi, V. Moroz, L. Smith, O. Penzin, 14nm FinFET stress engineering with epitaxial SiGe source/drain, in: Proceedings of the International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012, pp. 1–2.
5. Embedded source/drain SiGe stressor devices on SOI: integrations, performance, and analyses;Zhang;IEEE Trans. Electron. Devices,2006
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