Modelling of hot-carrier degradation and its application for analog design for reliability

Author:

Dubois Benoit,Kammerer Jean-Baptiste,Hébrard Luc,Braun Francis

Publisher

Elsevier BV

Subject

General Engineering

Reference10 articles.

1. Dynamic degradation in MOSFET's—Part I: the physical effects;Brox;IEEE Trans. Electron Devices,1991

2. Relationship between MOSFET degradation and hot-electron-induced interface-state generation;Hsu;IEEE Electron Device Lett.,1984

3. Hot-carrier damage from high to low voltage using the energy-driven framework;Guerin;Microelectron. Eng.,2007

4. Hot-electron-induced MOSFET degradation-model, monitor, and improvement;Hu;IEEE Trans. Electron Devices,1985

5. H. Le, P.J. Marcoux, W. Jiang, J.E. Chung, On the methodology of assessing hot-carrier reliability of analog circuits, IEEE IRW Final Report, 2000.

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analog CMOS implementation of FFT using cascode current mirror;Microelectronics Journal;2017-02

2. Bibliography;Nano-scale CMOS Analog Circuits;2014-02-20

3. Surrogate-Model-Based Analysis of Analog Circuits—Part II: Reliability Analysis;IEEE Transactions on Device and Materials Reliability;2011-09

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