An improved de-embedding procedure for nanometer MOSFET small signal modeling-Reference-Cited by-同舟云学术

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An improved de-embedding procedure for nanometer MOSFET small signal modeling

Published:2016-11 Issue: Volume:57 Page:60-65
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Zhou Ying,Yu Panpan,Yan Na,Gao Jianjun

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shanghai, China

Publisher

Elsevier BV

Subject

General Engineering

Reference9 articles.

1. Unique extraction of substrate parameters of common-source MOSFET's;Kim;IEEE Microw. Guide. Wave Lett.,2009

2. A 3.4dB NF k-band LNA with a tapped capacitor matching network in 65 nm CMOS technology;Xu;Int. J. RF Microw. Comput.-Aided Eng.,2015

3. Analytical approach of a nanoscale triple-material surrounding gate (TMSG) MOSFETs for reduced short-channel effects;Dhanaselvam;Microelectron. J.,2013

4. A new small-signal MOSFET model and parameter extraction method for RF IC's application;Chang;Microelectron. J.,2004

5. Direct parameter extraction method for deep submicrometer metal oxide semiconductor field effect transistor small signal equivalent circuit;Gao;IET Microw. Antennas Propag.,2009

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An improved open‐short equivalent circuit model for CMOS transistors de‐embedding;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-03-22

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