1. Power Semiconductor Devices;Baliga,1996
2. T. Laska, J. Fugger, F. Hirler, W. Scholz, Optimizing the vertical IGBT Structure—The NPT concept as the most economic and electrically ideal solution for a 1200V-IGBT, Proceedings ISPSD, 1996, pp. 169–172.
3. 1.2kV Trench insulated gate bipolar transistors with ultralow on-resistance;Udrea;IEEE Electron Dev. Lett.,1999
4. A novel lateral trench electrode IGBT for superior electrical characteristics;Kang;J. KIEEME,2002
5. A new trench electrode IGBT having superior electrical characteristics for power IC systems;Kang;Microelectron. J.,2001