Effects of deposition pressure on the microstructural and optoelectrical properties of B-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition-Reference-Cited by-同舟云学术

Effects of deposition pressure on the microstructural and optoelectrical properties of B-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition

Published:2008-01 Issue:1 Volume:39 Page:12-19
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Luo Peiqing,Zhou Zhibin,Li Youjie,Lin Shuquan,Dou Xiaoming,Cui Rongqiang

Publisher

Elsevier BV

Subject

General Engineering

Reference36 articles.

1. Optical investigation of Si nano-crystals in amorphous silicon matrix

2. Electroluminescence from B- and P-doped silicon nanoclusters

3. Electronic conductivity of hydrogenated nanocrystalline silicon films

4. Raman spectroscopy of B-doped microcrystalline silicon films

5. Luminescence study of silicon nanostructures prepared by ion beam mixing

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