High conductivity characteristics of phosphorus-doped nanocrystalline silicon thin films by KrF pulsed excimer laser irradiation method-Reference-Cited by-同舟云学术

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High conductivity characteristics of phosphorus-doped nanocrystalline silicon thin films by KrF pulsed excimer laser irradiation method

Published:2024 Issue:15 Volume:14 Page:10697-10702
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wang Xiang¹²,Song Chao¹³^ORCID,Xu Boxu⁴,Yang Huan³^ORCID

Affiliation:

1. Chaozhou Branch of Chemistry and Chemical Engineering Guangdong Laboratory, Chaozhou 521041, China

2. Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041, China

3. School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China

4. School of Science, University of Science and Technology Liaoning, Anshan 114051, China

Abstract

P-doped silicon nanocrystals with an average diameter of 2–3 nm are formed by using KrF pulsed excimer laser irradiation method. The dark conductivity as high as 25.7 S cm−1 can be obtained in P-doped nc-Si films after laser irradiation.

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D4RA00040D

Reference29 articles.

1. Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

2. Enhanced subband light emission from Si quantum dots/SiO₂ multilayers via phosphorus and boron co-doping

3. Temperature dependence of the optical properties of silicon nanocrystals

4. Water-soluble silicon nanocrystals as NIR luminescent probes for time-gated biomedical imaging

5. Direct-bandgap emission from hexagonal Ge and SiGe alloys

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