A low-power and high-gain fully integrated CMOS LNA

Author:

Toofan S.,Rahmati A.R.,Abrishamifar A.,Roientan Lahiji G.

Publisher

Elsevier BV

Subject

General Engineering

Reference15 articles.

1. CMOS LNA design for LEO space S-band applications;Telli;IEEE Can. Conf. Electr. Comput. Eng.,2003

2. A 1.5-V, 1.5-GHz CMOS low noise amplifier;Shaeffer;IEEE J. Solid-State Circuit,1997

3. A 0.8-dB NF ESD-protected 9-mW CMOS LNA operating at 1.23GHz;Leroux;IEEE J. Solid-State Circuit,2002

4. Design of a 1.8GHz low-noise amplifier for RF front-end in a 0.8μm CMOS Technology;Park;IEEE Trans. Consum. Electron.,2001

5. Fully-integrated DECT/bluetooth multi-band LNA in 0.18μm CMOS;Vidojkovic;IEEE ISCAS,2004

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2. Design of Low Noise and Ultra High Gain LNA with SOI Process Technology;2022 International Conference on Electronics, Information, and Communication (ICEIC);2022-02-06

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4. A Source Degenerated Cascode LNA with High Gain and Low Noise Figure Using Layout Optimized High Q Inductors;Communications in Computer and Information Science;2021

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