Author:
Benda V.,Cernik M.,Papez V.
Reference6 articles.
1. Measurement of minority carrier lifetime and surface effects in junction devices;Lederhandler;Proceedings of the IRE,1955
2. Determination of silicon power diode recombination parameters by combining open circuit voltage decay and storage time-reverse recovery data;Di Ziti;Solid State Electronics,1991
3. A study on the variation of carrier lifetime with temperature in bipolar silicon devices and its influence on device operation;Gerstenmaier,1994
4. Open circuit voltage decay lifetime of ion irradiated devices;Vobecky;Microelectronics Journal,1999
5. DIMOWIN—modelling diode reverse recovery process for education;Cernik,1998
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