Top electrode dependent resistive switching in M/ZnO/ITO memristors, M = Al, ITO, Cu, and Au-Reference-Cited by-同舟云学术

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Top electrode dependent resistive switching in M/ZnO/ITO memristors, M = Al, ITO, Cu, and Au

Published:2022-03 Issue: Volume:121 Page:105388
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Praveen P.,Rose T. Priya,Saji K.J.^ORCID

Publisher

Elsevier BV

Subject

General Engineering

Reference35 articles.

1. Memristor - The missing circuit element;Chua;IEEE Trans. Circuit Theory,1971

2. The missing memristor found;Strukov;Nature,2008

3. Spike-dependent plasticity modulation in TiO2-based synaptic device;Subin;J. Mater. Sci., Mater. Electron.,2021

4. The future of electronics based on memristive systems;Zidan;Nature Electron.,2018

5. Spiking neurons with spatiotemporal dynamics and gain modulation for monolithically integrated memristive neural networks;Duan;Nature Commun.,2020

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1. ZnO-based resistive memory with self-rectifying behavior for neuromorphic devices;Applied Surface Science;2024-10

2. 2D and Quasi-2D Halide Perovskite-Based Resistive Switching Memory Systems;Electronics;2024-09-08

3. Efficient non-volatile memory based on SiOx thin film fabricated on transparent ITO substrate;Applied Physics A;2024-08-05

4. Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO₂-Based Memristive Devices;ACS Omega;2024-05-26

5. Planar nanoscale vacuum channel transistors based on resistive switching;Nanotechnology;2024-03-07

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