Comprehensive performance enhancement of a negative-capacitance nanosheet field-effect transistor with a steep sub-threshold swing at the sub-5-nm node-Reference-Cited by-同舟云学术

Comprehensive performance enhancement of a negative-capacitance nanosheet field-effect transistor with a steep sub-threshold swing at the sub-5-nm node

Published:2022-02 Issue: Volume:120 Page:105363
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Lü Weifeng,Chen Xianlong,Liu Bo,Xie Ziqiang,Guo Mengxue,Zhao Mengjie

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

Elsevier BV

Subject

General Engineering

Reference36 articles.

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3. Realization with fabrication of double-gate MOSFET based differential amplifier;Pakaree;Microelectron. J.,2019

4. SOI FinFET based instrumentation amplifier for biomedical applications;Sonkusare;Microelectron. J.,2019

5. FinFET scaling to 10 nm gate length;Yu,2002

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1. Pushing the Boundaries: Design and Simulation Approach of Negative Capacitance Nanosheet FETs with Ferroelectric and Dielectric Spacers at the Sub-3 nm Technology Node for Analog/RF/Mixed Signal Applications;ACS Applied Electronic Materials;2024-05-09

2. Negative capacitance gate stack and Landau FET-based voltage amplifiers and circuits: Impact of ferroelectric thickness and domain variations;Microelectronics Journal;2023-12

3. Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials;Small;2023-10-29

4. Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review;IEEE Access;2023

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