Theory of Ga, N and H terminated GaN surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference17 articles.
1. Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
2. Composition and structure of the GaN{0001¯}-(1×1) surface
3. High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2× 2) and (4× 4) Reflection High Energy Electron Diffraction Patterns
4. Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal‐phase GaN by molecular beam epitaxy
5. Stability of surface reconstructions on hexagonal GaN grown by molecular beam epitaxy
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1. Theoretical study of GaN (0001) surface reconstructions and La and Ga adatoms under N- and Ga-rich conditions;Physical Review Materials;2021-04-05
2. Reconstruction and Stability of AlxGa1-xN (0001) and (000) Surfaces with Different Al Compositions: A Density Functional Study;Surface Science;2020-06
3. Review—Review of Research on AlGaN MOCVD Growth;ECS Journal of Solid State Science and Technology;2020-01-22
4. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09
5. Polarity in GaN and ZnO: Theory, measurement, growth, and devices;Applied Physics Reviews;2016-12
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