Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure-Reference-Cited by-同舟云学术

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Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Published:2002-08 Issue:10 Volume:123 Page:437-440
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Shi Jianjun,Wu Liangcai,Huang Xinfan,Liu Jiayu,Ma Zhongyuan,Li Wei,Li Xuefei,Xu Jun,Wu Di,Li Aidong,Chen Kunji

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference12 articles.

1. Identification of atomic-like electronic states in indium arsenide nanocrystal quantum dots

2. A silicon nanocrystals based memory

3. Single charge and confinement effects in nano‐crystal memories

4. Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure and transport properties of Ge quantum dots in a SiO2 matrix;Journal of Physics D: Applied Physics;2015-05-14

2. Hysteresis modeling in graphene field effect transistors;Journal of Applied Physics;2015-02-21

3. Capacitance properties of MOS capacitors with oxide-hosted Si nanoparticles;SPIE Proceedings;2013-01-08

4. A model to describe the humplike feature observed in the accumulation branch of capacitance-voltage characteristics of MOS capacitors with oxide-hosted silicon nanoparticles;Technical Physics Letters;2012-09

5. Electrical Transport Mechanisms in Ensembles of Silicon Nanocystallites;Silicon Nanocrystals;2010-04-29

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