Structure and transport properties of Ge quantum dots in a SiO2 matrix-Reference-Cited by-同舟云学术

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Structure and transport properties of Ge quantum dots in a SiO2 matrix

Published:2015-05-14 Issue:23 Volume:48 Page:235301
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Slunjski R,Dubček P,Radić N,Bernstorff S,Pivac B

Funder

Croatian Science Foundation

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/48/i=23/a=235301/pdf

Reference22 articles.

1. Porous silicon: a quantum sponge structure for silicon based optoelectronics

2. Near-infrared–ultraviolet absorption cross sections for Ge nanocrystals in SiO2 thin films: Effects of shape and layer structure

3. Electrical transport mechanisms in three dimensional ensembles of silicon quantum dots

4. Silicon nanostructures for third generation photovoltaic solar cells

5. Self-consistent optical parameters of intrinsic silicon at 300K including temperature coefficients

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The interface quality of Ge nanoparticles grown in thick silica matrix;Applied Surface Science;2017-08

2. Influence of stress on the properties of Ge nanocrystals in an SiO2matrix;Journal of Applied Crystallography;2016-10-21

3. Strain distribution of confined Ge/GeO2 core/shell nanoparticles engineered by growth environments;CHEM PHYS LETT;2016

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