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Effect of HgCdTe–passivant interface properties on the responsivity performance of photoconductive detectors

  • Published:1999-04 Issue:2 Volume:40 Page:101-107
  • ISSN:1350-4495
  • Container-title:Infrared Physics & Technology
  • language:en
  • Short-container-title:Infrared Physics & Technology

Author:

Pal R.,Sharma B.L.,Gopal V.,Kumar V.,Agnihotri O.P.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. A gate-controlled HgCdTe long-wavelength infrared photoconductive detector

2. Improved device technology for epitaxial Hg1-xCdxTe infrared photoconductor arrays

3. V. Gopal, Semicond. Sci. Technol., Accepted for publication, Scheduled publication date: Aug. 1998.

4. Evaluation of processing induced variations in a mercury cadmium telluride photoconductive (PC) array

5. A. Many, Y. Goldstein, H.B. Grove, Semiconductor Surfaces, North-Holland, New York, 1965.

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