IR selective sensitivity of amorphous/crystalline silicon heterostructure
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. The current transport mechanism of p-type aSi:H/n-type cSi heterojunctions and their application to an imaging device
2. Carrier transport mechanisms ofp‐type amorphous–n‐type crystalline silicon heterojunctions
3. Irregularities in current-voltage characteristics of hydrogenated-amorphous-silicon-based barrier structures: Resonant tunnelling against hopping and filamentary conduction through the barriers
4. Electrical properties of a-GaAs/c-Si (p) heterojunctions
5. Electrical properties ofn‐amorphous/p‐crystalline silicon heterojunctions
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