Irregularities in current-voltage characteristics of hydrogenated-amorphous-silicon-based barrier structures: Resonant tunnelling against hopping and filamentary conduction through the barriers
Author:
Affiliation:
1. a Institut für Physikalische Elektronik, Universität Stuttgart , Pfaffenwaldring 47, D-70569, Stuttgart , 80 , Germany
2. b Institut für Theoretische Physik, Ruhr-Universität Bochum , Postfach 102 148, D-44780 , Bochum , Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418639408240279
Reference26 articles.
1. Amorphous Semiconductor Superlattices
2. Electronic transport through a-Si:H/a-SiNx:H single and double barrier structures
3. On the blue-shift of the optical bandgap of a-Si:H/a-SiNx:H multilayer structures
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