Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls-Reference-Cited by-同舟云学术

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Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls

Published:2021-11 Issue: Volume:50 Page:8-15
ISSN:1369-7021
Container-title:Materials Today
language:en
Short-container-title:Materials Today

Author:

Choe Duk-Hyun,Kim Sunghyun,Moon Taehwan,Jo Sanghyun,Bae Hagyoul,Nam Seung-Geol,Lee Yun Seong,Heo Jinseong

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference59 articles.

1. Ferroelectricity in hafnium oxide thin films;Böscke;Appl. Phys. Lett.,2011

2. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors;Mikolajick;MRS Bull.,2018

3. Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices;Schroeder,2019

4. The future of ferroelectric field-effect transistor technology;Khan;Nat. Electron.,2020

5. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight;Clima;Appl. Phys. Lett.,2014

Cited by 52 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical origin of hafnium-based ferroelectricity;Computational Materials Today;2024-12

2. Progress in computational understanding of ferroelectric mechanisms in HfO2;npj Computational Materials;2024-08-23

3. Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing;Small;2024-08-16

4. Ferroelectric Al_0.85Sc_0.15N and Hf_0.5Zr_0.5O₂ Domain Switching Dynamics;ACS Applied Materials & Interfaces;2024-07-31

5. Erratum: “Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation” [Appl. Phys. Lett. 124, 092901 (2024)];Applied Physics Letters;2024-07-08

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