Effects of point defects on oxidation of 3C–SiC-Reference-Cited by-同舟云学术

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Effects of point defects on oxidation of 3C–SiC

Published:2020-09 Issue: Volume:538 Page:152308
ISSN:0022-3115
Container-title:Journal of Nuclear Materials
language:en
Short-container-title:Journal of Nuclear Materials

Author:

Xi Jianqi,Liu Cheng,Szlufarska Izabela

Funder

U.S. Department of Energy

Publisher

Elsevier BV

Subject

Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics

Reference19 articles.

1. Comparison study on performances and robustness between SiC MOSFET & JFET devices - abilities for aeronautics application;Othman;Microelectron. Reliab.,2012

2. Molten fluorides for nuclear applications, Mater;Delpech;Today Off.,2010

3. Radiation effects in SiC for nuclear structural applications;Katoh;Curr. Opin. Solid State Mater. Sci.,2012

4. Handbook of SiC properties for fuel performance modeling;Snead;J. Nucl. Mater.,2007

5. Radiation-induced material changes and susceptibility to intergranular failure of light-water-reactor core internals;Bruemmer;J. Nucl. Mater.,1999

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1. Exploring Defect Dynamics and Twin-Layer Interactions in SiC Crystals through Molecular Simulations;The Journal of Physical Chemistry B;2024-08-01

2. Investigating the Corrosion Resistance of Different SiC Crystal Types: From Energy Sectors to Advanced Applications;Langmuir;2024-06-03

3. Grain boundary effects on defect production and damage cascade evolution in SiC/PyC interface: A molecular dynamics study;Modern Physics Letters B;2024-04-01

4. Radiation induced segregation in titanium diboride;Acta Materialia;2024-04

5. Coupling of radiation and grain boundary corrosion in SiC;npj Materials Degradation;2024-02-01

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