Comparison study on performances and robustness between SiC MOSFET & JFET devices – Abilities for aeronautics application

Author:

Othman D.,Berkani M.,Lefebvre S.,Ibrahim A.,Khatir Z.,Bouzourene A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Bergogne D, Planson D, Morel H, Brevet O, Mrad S, Allard B, et al. 300°C operating junction temperature inverter leg investigations. In: IEEE power electronics and applications conference;2005.

2. Bergogne D, Risaletto D, Dubois F, Hammoud A, Morel H, Bevilacqua P, et al. Normally-On SiC JFETs in power converters: Gate driver and safe operation. In: IEEE integrated power electronics systems conference (CIPS);2010.

3. Assessing the Impact of SiC MOSFETs on Converter Interfaces for Distributed Energy Resources

4. Sheng H, Chen Z, Wang F, Millner A. Investigation of 1.2kV SiC MOSFET for high frequency high power applications. In: IEEE vehicule power and propulsion conference (VPPC); September 2010.

5. Switching and conducting performance of SiC-JFET and ESBT against MOSFET and IGBT;Knop;IEEE Trans Power Electron,2008

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