Experimental location of helium atoms in 6H–SiC crystal lattice after implantation and after annealing at 400 °C-Reference-Cited by-同舟云学术

Experimental location of helium atoms in 6H–SiC crystal lattice after implantation and after annealing at 400 °C

Published:2015-04 Issue: Volume:459 Page:62-69
ISSN:0022-3115
Container-title:Journal of Nuclear Materials
language:en
Short-container-title:Journal of Nuclear Materials

Author:

Linez F.,Garrido F.,Erramli H.,Sauvage T.,Courtois B.,Desgardin P.,Barthe M.-F.

Funder

GNR MATINEX

Publisher

Elsevier BV

Subject

Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics

Reference32 articles.

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5. Helium behavior in α-SiC ceramics investigated by NRA technique

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