Direct observation of microtwin formation at crack tips in InP-Reference-Cited by-同舟云学术

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Direct observation of microtwin formation at crack tips in InP

Published:1992-02 Issue:4 Volume:26 Page:609-614
ISSN:0956-716X
Container-title:Scripta Metallurgica et Materialia
language:en
Short-container-title:Scripta Metallurgica et Materialia

Author:

Vanderschaeve G,Caillard D,Peyrade J.P

Publisher

Elsevier BV

Subject

General Engineering

Reference17 articles.

1. Slip and twinning in high-stress-deformed GaAs and the influence of doping

2. Single stacking faults in high-stress deformed semi-insulating GaAs

3. Plastic deformation of GaAs single crystals as a function of electronic doping II: Low temperatures (20–300°C)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plastic deformation, extended stacking faults and deformation twinning in single crystalline indium phosphide 2. S doped InP;Philosophical Magazine A;1996-03

2. Deformation twinning;Progress in Materials Science;1995

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