Single stacking faults in high-stress deformed semi-insulating GaAs-Reference-Cited by-同舟云学术

Single stacking faults in high-stress deformed semi-insulating GaAs

Published:1987-10 Issue:4 Volume:56 Page:135-141
ISSN:0950-0839
Container-title:Philosophical Magazine Letters
language:en
Short-container-title:Philosophical Magazine Letters

Author:

Lefebvre A.¹,Androussi Y.¹,Vanderschaeve G.¹

Affiliation:

1. a Laboratoire de Structure et Rropriétés de l'Etat Solide , U.A. 234, C.N.R.S. Université des Sciences et Techniques de Lille Flandres-Artois , Bâtiment C-6, 59655, Villeneuve d'Ascq Cedex, France

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/09500838708203761

Reference12 articles.

1. MODELS OF THE DISLOCATION STRUCTURE

2. Androussi , Y. François , P. Di Persio , J. Vanderschaeve , G. and Lefebvre , A. 1986.Proc. Fourteenth Int. Conf on Defects in Semiconductors, Materials Science ForumEdited by: von Bardeleben , H. J. Vols, 10–12, 821

3. Feuillet , G. 1982. Oxford: M.Sc. Dissertation.

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