The regulation of the withstand voltage performance of ZnO/GaN vertical heterostructures using external electric field and vacancy defects-Reference-Cited by-同舟云学术

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The regulation of the withstand voltage performance of ZnO/GaN vertical heterostructures using external electric field and vacancy defects

Published:2023-05 Issue: Volume:120 Page:108424
ISSN:1093-3263
Container-title:Journal of Molecular Graphics and Modelling
language:en
Short-container-title:Journal of Molecular Graphics and Modelling

Author:

Yang Mingya,Ding Jijun^ORCID,Wang Xiangyu,Chen Haixia,Fu Haiwei

Publisher

Elsevier BV

Subject

Materials Chemistry,Computer Graphics and Computer-Aided Design,Physical and Theoretical Chemistry,Spectroscopy

Reference35 articles.

1. Bandgap engineering of two-dimensional semiconductor materials;Chaves;NPJ 2D Mater. Appl.,2020

2. Investigation on tunable electronic properties of semiconducting graphene induced by boron and sulfur doping;Qu;Appl. Surf. Sci.,2021

3. Electronic and optoelectronic properties of van der Waals heterostructure based on graphene-like GaN, blue phosphorene, SiC, and ZnO: a first principles study;Idrees;J. Appl. Phys.,2020

4. First-principles study on the vertical heterostructure of the BSe and AlN monolayers;Song;Appl. Surf. Sci.,2022

5. Controlling electrical and thermoelectric properties of bilayer SiC by bias voltage;Chegel;Solid State Sci.,2022

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of vacancy defect in 2D/3D semiconductor heterostructure based on monolayer WSe2 and GaN;Materials Today Communications;2024-08

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