Modulated interfacial band alignment of β-Ga2O3/GaN heterojunction by the polarization charge transfer-Reference-Cited by-同舟云学术

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Modulated interfacial band alignment of β-Ga2O3/GaN heterojunction by the polarization charge transfer

Published:2022-06 Issue: Volume:586 Page:152831
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhu Naxin,Ma Kaichuang,Zhang Pengliang,Xue Xiangyi,Su Jie

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference44 articles.

1. Ultrasensitive, Superhigh Signal-to-Noise Ratio, Self-Powered Solar-Blind Photodetector Based on n -Ga 2 O 3 / p -CuSCN Core-Shell Microwire Heterojunction;Li;ACS Appl. Mater. Interfaces,2019

2. Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga 2 O 3 /NSTO Heterojunction;Guo;ACS Appl. Mater. Interfaces,2017

3. High sensitive and stable self-powered solar-blind photodetector based on solution-processed all inorganic CuMO2/Ga2O3 pn heterojunction;Wu;Materials Today Physics.,2021

4. Demonstration of β-(Al x Ga 1–x) 2 O 3 /Ga 2 O 3 double heterostructure field effect transistors;Zhang;Appl. Phys. Lett.,2018

5. Metal oxide heterojunctions for high performance solution grown oxide thin film transistors;He;Appl. Surf. Sci.,2020

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1. Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices;Materials Science in Semiconductor Processing;2025-01

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3. Flexible and Self‐Powered Photoelectrochemical‐Type Solar‐Blind Photodetectors Based on Ag Nanowires‐Embedded Amorphous Ga₂O₃ Films;Advanced Optical Materials;2024-04-20

4. The effect of vacancy defects on the electronic characteristics of the β-Ga2O3/AlN interface;Journal of Crystal Growth;2024-02

5. Engineered interface states and optical absorption of β-Ga₂O₃/4H-SiC heterojunctions by irradiation-induced oxygen defects from first-principles;Journal of Materials Chemistry C;2024

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