Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C–V-Reference-Cited by-同舟云学术

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Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C–V

Published:2014-06 Issue: Volume:303 Page:388-392
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Piallat Fabien,Beugin Virginie,Gassilloud Remy,Dussault Laurent,Pelissier Bernard,Leroux Charles,Caubet Pierre,Vallée Christophe

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics

2. Physical and Electrical Characteristics of HfO[sub 2] Gate Dielectrics Deposited by ALD and MOCVD

3. International Technology Roadmap for Semiconductors,2012

4. The stability and work function of TaCxN1−x alloy surfaces

5. Surface energy and work function of elemental metals

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