The important role of Mn3+ in the room-temperature ferromagnetism of Mn-doped GaN films-Reference-Cited by-同舟云学术

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The important role of Mn3+ in the room-temperature ferromagnetism of Mn-doped GaN films

Published:2011-10 Issue:1 Volume:258 Page:525-529
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hu B.,Man B.Y.,Yang C.,Liu M.,Chen C.S.,Gao X.G.,Xu S.C.,Wang C.C.,Sun Z.C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference20 articles.

1. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

2. Influence of 3d-Transition-Metal Additives on Single Crystal Growth of GaN by the Na Flux Method

3. Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

4. Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

5. Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire(0001) showing the ferromagnetic behaviour at room temperature

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