Effects of the sputtering time of ZnO buffer layer on the quality of GaN thin films-Reference-Cited by-同舟云学术

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Effects of the sputtering time of ZnO buffer layer on the quality of GaN thin films

Published:2008-08 Issue:21 Volume:254 Page:6766-6769
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Xue Shoubin,Zhang Xing,Huang Ru,Zhuang Huizhao

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

1. Continuous‐wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K

2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

3. High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes

4. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

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1. Optimization of high-quality gallium nitride thin films deposited on silicon substrates with an aluminum nitride buffer layer through radio-frequency magnetron sputtering;Vacuum;2024-09

2. Optimization of High-Quality Gallium Nitride Thin Films Deposited on Silicon Substrates with an Aluminum Nitride Buffer Layer Through Radio-Frequency Magnetron Sputtering;2023

3. X-ray absorption study of defects in reactively sputtered GaN films displaying large variation of conductivity;Semiconductor Science and Technology;2021-06-17

4. Microstructural dependence of residual stress in reactively sputtered epitaxial GaN films;Journal of Physics D: Applied Physics;2021-02-16

5. High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures;Nanomaterials;2020-12-05

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