Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma-Reference-Cited by-同舟云学术

Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma

Published:2015-05 Issue: Volume:338 Page:35-41
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Goerke Sebastian,Ziegler Mario,Ihring Andreas,Dellith Jan,Undisz Andreas,Diegel Marco,Anders Solveig,Huebner Uwe,Rettenmayr Markus,Meyer Hans-Georg

Funder

Federal Ministry of Education and Research, Germany (BMBF)

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference30 articles.

1. Structured SiN membranes as platform for cryogenic bolometers

2. F. Haenschke, E. Kessler, U. Dillner, A. Ihring, U. Schinkel, H.-G. Meyer, B.F. Andresen, G.F. Fulop, P.R. Norton, in: SPIE Defense, Security, and Sensing, SPIE, 2012, p. 83531L.

3. Surface-micromachined thermoelectric infrared focal-plane array with high detectivity for room temperature operation

4. Single-crystal aluminum nitride nanomechanical resonators

5. A novel checker-patterned AlN MEMS resonator as gravimetric sensor

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