N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C-Reference-Cited by-同舟云学术

N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C

Published:2004-03 Issue:1-4 Volume:224 Page:31-35
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Meunier-Beillard P,Caymax M,Van Nieuwenhuysen K,Doumen G,Brijs B,Hopstaken M,Geenen L,Vandervorst W

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. J. Bloem, L.J. Giling, Mechanisms of the Chemical Vapor Deposition of Silicon, Current Topics in Materials Science, vol. 1, North-Holland, Amsterdam, 1978, Chapter 4, pp. 147–342.

2. H coverage dependence of Si(001) homoepitaxy

3. F. Holsteyns, J. Roels, K. Kenis, P.W. Mertens, Process monitoring and qualification of CVD/PVD tools using comprehemsive surface haze information, in: Proceedings of the Yield Management Seminar, Japan, 2002.

4. R. Loo, P. Meunier-Beillard, R. Delhougne, T. Koumoto, L. Geenen, B. Brijs, in: ECS Proceedings, vol. 2003–03, 2003, p. 329.

5. Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate

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