Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure-Reference-Cited by-同舟云学术

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Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure

Published:2004-03 Issue:1-4 Volume:224 Page:336-340
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Suvar E,Haralson E,Radamson H.H,Wang Y.-B,Grahn J.V,Malm B.G,Östling M

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference13 articles.

1. K. Oda, E. Ohue, I. Suzumura, R. Hayami, A. Kodama, H. Shimamoto, K. Washio, IEDM01 Tech. Dig. (2001) 332.

2. A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

3. A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget

4. H. Rucker, B. Heinemann, D. Bolze, D. Knoll, D. Kruger, R. Kurps, H.J. Osten, P. Schley, B. Tillack, P. Zaumseil, IEDM 99 Technol. Dig. (1999) 345.

5. H.J.D. Knoll, B. Heinemann, H. Rouker, B. Tillack, IEEE BCTM (1999) 109.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NiSi integration in a non-selective base SiGeC HBT process;Materials Science in Semiconductor Processing;2005-02

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