Epitaxial growth of Nd2Hf2O7(111) thin films on Ge(111) substrates by pulsed laser deposition
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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1. High-κ gate dielectrics: Current status and materials properties considerations
2. Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges
3. High performance germanium MOSFETs
4. Electrical and reliability characterization of metal-gate/HfO2/Ge FET’s with Si passivation
5. Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Heat capacity and thermal expansion of neodymium hafnate ceramics;Ceramics International;2019-11
2. Promising high-k dielectric permittivity of pyrochlore-type crystals of Nd2Hf2O7;Journal of Materials Chemistry C;2015
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