Author:
Liting Lin,Xin Li,Hongyu Zhang
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference24 articles.
1. A survey of wide bandgap power semiconductor devices;Millan;IEEE Trans. Power Electron.,2014
2. R.R. Lamichhane, N. Ericsson, S. Frank, C. Britton, L. Marlino, A. Mantooth, M. Francis, P. Shepherd, M. Glover, S. Perez, T. McNutt, B. Whitaker, Z. Cole, A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications, in: Proceedings of IEEE International Symposium on Power Semiconductor Devices and Ic', 2014, pp. 414-417. 10.1109/ISPSD.2014.6856064.
3. State of the art of high temperature power electronics;Buttay;Mater. Sci. Eng. B: Solid State Adv. Technol.,2011
4. Review of silver nanoparticle based die attach materials for high power/temperature applications;Paknejad;Microelectron. Reliab.,2017
5. Failure analysis and reliability evaluation of silver-sintered die attachment for high-temperature applications;Zhang;Microelectron. Reliab.,2019
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献