High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference46 articles.
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3. Present status of amorphous In-Ga-Zn-O thin-film transistors;Kamiya;Sci. Technol. Adv. Mater.,2010
4. Conductivity in transparent oxide semiconductors;King;J. Phys. Condens. Matter,2011
5. Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3;King;Phys. Rev. B - Condens. Matter Mater. Phys.,2009
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