Low temperature epitaxial growth and characterization of Ga-doped ZnO thin films on Al2O3 (0001) substrates prepared with different buffer layers-Reference-Cited by-同舟云学术

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Low temperature epitaxial growth and characterization of Ga-doped ZnO thin films on Al2O3 (0001) substrates prepared with different buffer layers

Published:2012-04 Issue:12 Volume:258 Page:5073-5079
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Shin Seung Wook,Agawane G.L.,Kim In Young,Kwon Ye Bin,Jung In Ok,Gang Myeng Gil,Moholkar A.V.,Moon Jong-Ha,Kim Jin Hyeok,Lee Jeong Yong

Funder

Korea Institute of Industrial Technology (KITECH)

Korea government (MEST)

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference25 articles.

1. A Study of Drop-Coated and Chemical Bath-Deposited Buffer Layers for Vapor Phase Deposition of Large Area, Aligned, Zinc Oxide Nanorod Arrays

2. Realization of Vertically Well-Aligned ZnO:Ga Nanorods by Magnetron Sputtering and Their Field Emission Behavior

3. Hydrothermally grown ZnO buffer layer for the growth of highly (4wt%) Ga-doped ZnO epitaxial thin films on MgAl2O4 (111) substrates

4. A study on the epitaxy nature and properties of 3wt% Ga-doped epitaxial ZnO thin film on Al2O3 (0001) substrates

5. Effect of a ZnO buffer layer on the properties of Ga-doped ZnO thin films grown on Al2O3 (0001) substrates at a low growth temperature of 250°C

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3. High thermoelectric performance of high‐mobility Ga‐doped ZnO films via homogenous interface design;Journal of the American Ceramic Society;2021-04-07

4. Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer;Materials;2017-12-01

5. Annealing to achieve lower resistivity in Ga-doped ZnO epitaxial films grown from low-temperature aqueous solution;Materials Chemistry and Physics;2017-04

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