Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator-Reference-Cited by-同舟云学术

Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator

Published:2019-05 Issue: Volume:476 Page:374-377
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kang Leeseung,An HyeLan,Jung Seungmin,Kim Seyul,Nahm Sahn,Kim Dae-guen,Lee Chan Gi

Funder

R&D Center for Valuable Recycling

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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4. Organic thin film transistors for large area electronics;Dimitrakopoulos;Adv. Mater.,2002

5. Thin-film transistors;Street;Adv. Mater.,2009

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