All-Solution-Processed High-Performance MoS2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

Author:

Joung Su-Yeon1ORCID,Yim Haena2,Lee Donghun3,Shim Jaehyung3,Yoo So Yeon2,Kim Yeon Ho3,Kim Jin Seok3,Kim Hyunjun4,Hyeong Seok-Ki5,Kim Junhee3,Noh Yong-Young4ORCID,Bae Sukang56ORCID,Park Myung Jin7,Choi Ji-Won28ORCID,Lee Chul-Ho1ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea

2. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea

3. KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea

4. Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea

5. Functional Composite Materials Research Center, Korea Institute of Science and Technology, Chudong-ro 92, Bongdong-eup, Wanju-gun, Jeonbuk 55324, Republic of Korea

6. Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonbuk 54896, Republic of Korea

7. National Institute for Nanomaterials Technology, 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea

8. Department of Nanomaterials Science and Engineering, Korea University of Science and Technology, Daejeon 34113, Republic of Korea

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology

Seoul National University

Publisher

American Chemical Society (ACS)

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