Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system-Reference-Cited by-同舟云学术

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Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system

Published:2008-07 Issue:19 Volume:254 Page:6090-6093
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yokogawa Takashi,Ishibashi Kiyohisa,Sakuraba Masao,Murota Junichi,Inokuchi Yasuhiro,Kunii Yasuo,Kurokawa Harushige

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference12 articles.

1. Atomically Controlled Technology for Future Si-Based Devices

2. Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

3. Atomic control of doping during SiGe epitaxy

4. M. Nomura, M. Sakuraba, J. Murota, Abstracts of 2nd International Workshop on New Group IV(Si–Ge–C) Semiconductor, Kofu, Japan, June 2–4, 2002, Abs. no.VI-09.

5. Atomic layer processing for doping of SiGe

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Behavior of N atoms after thermal nitridation of Si1−xGex surface;Thin Solid Films;2012-02

2. Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD;Thin Solid Films;2010-01

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