Atomically Controlled Technology for Future Si-Based Devices
Author:
Affiliation:
1. Tohoku University
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Link
https://www.scientific.net/SSP.95-96.607.pdf
Reference32 articles.
1. M.T. Bohr: IEEE Transactions on Nanotechnology Vol. 1 (2002), p.56.
2. B. S. Meyerson: Appl. Phys. Lett. Vol. 48 (1986), p.797.
3. J. Murota, N. Nakamura, M. Kato, N. Mikoshiba and T. Ohmi: Appl. Phys. Lett. Vol. 54 (1989), p.1007.
4. J. Murota and S. Ono: Jpn. J. Appl. Phys. Vol. 33 (1994), p.2290.
5. J. Murota, T. Matsuura and M. Sakuraba: Surf. Interface Anal. Vol. 34 (2002), p.423.
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