Study of structural and electronic environments of hydrogenated amorphous silicon carbonitride (a-SiCN:H) films deposited by hot wire chemical vapor deposition-Reference-Cited by-同舟云学术

Study of structural and electronic environments of hydrogenated amorphous silicon carbonitride (a-SiCN:H) films deposited by hot wire chemical vapor deposition

Published:2008-06 Issue:17 Volume:254 Page:5319-5322
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Swain Bibhu P.,Hwang Nong M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

1. IR-study of a-SiCx:H and a-SiCxNy:H films for c-Si surface passivation

2. Multilayered metal capping barrier including CuSiN, for sub-65-nm technology nodes

3. Determination of the hardness and elastic modulus of low-k thin films and their barrier layer for microelectronic applications

4. Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

5. Properties of carbon films and their biocompatibility using in-vitro tests

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