Reduced self-heating by strained silicon substrate engineering-Reference-Cited by-同舟云学术

Reduced self-heating by strained silicon substrate engineering

Published:2008-07 Issue:19 Volume:254 Page:6182-6185
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

O’Neill A.,Agaiby R.,Olsen S.,Yang Y.,Hellstrom P.-E.,Ostling M.,Oehme M.,Lyutovich K.,Kasper E.,Eneman G.,Verheyen P.,Loo R.,Claeys C.,Fiegna C.,Sangiorgi E.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference10 articles.

1. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

2. High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

3. A 90-nm Logic Technology Featuring Strained-Silicon

4. Maintaining the benefits of CMOS scaling when scaling bogs down

5. Measurement and modeling of self-heating in SOI nMOSFET's

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