Nano-heat Transfer in GAAFET Transistor Using Single-Phase-Lag Model
Author:
Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-030-84958-0_12
Reference28 articles.
1. Koh, M., et al.: Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current. IEEE Trans. Electron Devices 48(2), 259–264 (2001)
2. Reuveny, A., et al.: Thermal stability of organic transistors with short channel length on ultrathin foils. Org. Electron. 26, 279–284 (2015)
3. Belkhiria, M., et al.: Impact of high-k gate dielectric on self-heating effects in PiFETs structure. IEEE Trans. Electron Devices 67(9), 3522–3529 (2020)
4. Cai, L., et al.: Layout design correlated with self-heating effect in stacked nanosheet transistors. IEEE Trans. Electron Devices 65(6), 2647–2653 (2018)
5. Garegnani, G., et al.: Wafer level measurements and numerical analysis of self-heating phenomena in nano-scale SOI MOSFETs. Microelectron. Reliab. 63, 90–96 (2016)
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modeling and Optimization of GAAFET Transistor using Taguchi Approach and Artificial Neural Network (ANN);2023 IEEE International Conference on Artificial Intelligence & Green Energy (ICAIGE);2023-10-12
2. Approximate Solution of the Heat Transfer Equation as a Function of the Transfer Potential Coefficient;Lecture Notes in Networks and Systems;2022-11-16
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3