Study by EELS and EPES of the stability of InPO4/InP system-Reference-Cited by-同舟云学术

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Study by EELS and EPES of the stability of InPO4/InP system

Published:2008-09 Issue:22 Volume:254 Page:7394-7400
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ouerdane A.,Bouslama M.,Ghaffour M.,Abdellaoui A.,Hamaida K.,Lounis Z.,Monteil Y.,Berrouachedi N.,Ouhaibi A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. On the chemistry of passivated oxide–InP interfaces

2. Evidence for interfacial defects in metal‐insulator‐InP structures induced by the insulator deposition

3. An AES and ELS study of InP (100) surface subjected to argon ion bombardment

4. Correlation of the fine structure of InM4.5N4.5N4.5Auger spectrum and thermal degradation at InP surfaces

5. Electron‐stimulated oxidation of InP (100) surfaces studied by Auger electron spectroscopy and by low‐energy‐loss spectroscopy

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1. Nanoscale Component Diffusion Study of InP/SiC Heterogeneous Bonding Interface for High-Quality Optoelectronic Device Integration;ACS Applied Nano Materials;2024-09-09

2. Elucidating the Mechanism of Large Phosphate Molecule Intercalation Through Graphene-Substrate Heterointerfaces;ACS Applied Materials & Interfaces;2023-10-02

3. Effect of a Thin Film of Polypolyphosphazene on the pH Response of InP;ECS Transactions;2017-04-25

4. Band alignment and quantum states of InAsxP1−x/InP surface quantum wells investigated from ultraviolet photoelectron spectroscopy and photoluminescence;Materials Letters;2012-11

5. AES and EELS tools associated to TRIM simulation methods to study nanostructures on III-V semiconductor surfaces;IOP Conference Series: Materials Science and Engineering;2012-02-07

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