Optoelectronic properties of p-type NiO films deposited by direct current magnetron sputtering versus high power impulse magnetron sputtering-Reference-Cited by-同舟云学术

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Optoelectronic properties of p-type NiO films deposited by direct current magnetron sputtering versus high power impulse magnetron sputtering

Published:2020-04 Issue: Volume:508 Page:145106
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chen Sheng-Chi,Kuo Tsung-Yen,Lin Hsin-Chih,Chen Rong-Zhi,Sun Hui

Funder

Shandong University

Ministry of Science and Technology, Taiwan

Natural Science Foundation of Shandong Province

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference40 articles.

1. Transparent conductors as solar energy materials: a panoramic review;Granqvist;Sol. Energy Mater. Sol. Cells,2007

2. Highly conductive flexible ultra thin ITO nanoclusters prepared by 3-D confined magnetron sputtering at a low temperature;Sahu;Scr. Mater.,2018

3. Study on the electrical, optical, structural, and morphological properties of highly transparent and conductive AZO thin films prepared near room temperature;Wen;Appl. Surf. Sci.,2019

4. Recent developments in p-type oxide semiconductor materials and devices;Wang;Adv. Mater.,2016

5. Electrospun nanofibers of p-type NiO/n-Type ZnO heterojunctions with enhanced photocatalytic activity;Zhang;Appl. Mater. Interfaces,2010

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